High throughput, typical cycle time 2 s for wafers

• High performance, < ±1 % thickness variation
• Wide source configuration for wide range of film materials
• Separate reaction chamber inside the vacuum chamber
  - Easy-to-change reaction chambers for various substrates
  - No film growth on vacuum chamber walls – easy to clean
• Flexible recipe system for multi-layer film structure

• Oxides (e.g. Al2O3, HfO2, TiO2, ZrO2 )
• Nitrides (e.g. AlN, TiN)
• Polymers (e.g. polyimides, polyamides)
• Biocompatible thin films (e.g. hydroxyapatite, TiO2)
• Sulfides (e.g. ZnS)
• Metals (e.g. Pt)
• Doped materials (e.g. ZnO:Al, Y:ZrO2)

• Wafers
• Solid or porous 3D objects
• Granular material and powders
• Fibers and nanotubes
• Materials: Si, glass, metals, ceramics, plastics etc.

Features:

• Temperature: 25-500ºC
  
• Reaction sample size: 200mm diameter,5mm/100mm height
  
• Gas lines: up to 8
  
• Liquid source: up to 3
  
• Hot source: up to 4 for HS200/300,up to 2 for HS500
  
• Performance: <2sec cycle time with less than ±1% thickness variation
  

Application
Deposition of thin film material:

• Oxides (e.g. Al2O3, HfO2, TiO2, ZrO2 , Y2O3)
• Nitrides (e.g. AlN, TiN, WxN)
• Sulfides (e.g. ZnS, CaS)
• Fluorides (e.g. ZnF2, SrF2)
• Metals (e.g. Pt, Ir, Pd)
• Doped materials (e.g. ZnS:Mn, ZnO:Al)
• Polymers (polyimides)
• Biocompatible thin films (hydroxyapatite)